Part RF3931
Description 30W GaN WIDE-BAND POWER AMPLIFIER
Manufacturer RF Micro Devices
Size 536.60 KB
RF Micro Devices
RF3931

Overview

  • Broadband Operation DC to 3 GHz
  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Gain=15dB at 2GHz
  • 48V Operation Typical Performance - Output Power 30W at P3dB - Power Added Efficiency 65% - -40°C to 85°C Operation
  • EAR99 Export Control