FEATURES
Broadband Operation DC to 3 GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB - Power Added Efficiency 65% - -40°C to 85°C Operation EAR99 Export Control RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram APPLICATIONS
Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical Product DESCRIPTION
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. RF3931 is the first product released in RFMD's new family of GaN Unmatched Power Transistors.
RFMD
