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RF3931 Datasheet 30w Gan Wide-band Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged.

General Description

The RF3931 is a 48 V 30 W high power discrete amplifier designed for mercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.

The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package.

Key Features

  • Broadband Operation DC to 3 GHz.
  • Advanced GaN HEMT Technology.
  • Advanced Heat-Sink Technology.
  • Gain=15dB at 2GHz.
  • 48V Operation Typical Performance - Output Power 30W at P3dB - Power Added Efficiency 65% - -40°C to 85°C Operation.
  • EAR99 Export Control RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description
RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900/DCS/PCS/POWER AMPLIFIER MODULE
RF3237 QUAD-BAND GSM/GPRS
RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE

RF3931 Distributor