RFMD2014 Datasheet | RF Micro Devices

Features - ACPR Performance: -70d Bc Typ. for 1-Carrier WCDMA - Very High Linearity: +26d Bm OIP3 - Very Low Noise Floor: -160 d Bm/Hz - High Output Power: +11d Bm P1d B - Typical Carrier Feed-Through: <-40 d Bm - Single-Ended or Differential LO Drive - Typical Sideband Suppression: <-40 d Bc - Single +5V Supply - Small 24-Pin, 4mmx4mm, QFN Applications - Cellular, 3G Infrastructure - Wi Bro, Wi Max, LTE - Wi FI or WLL Systems - GMSK, QPSK, DQPSK, QAM Modulation 24 23 22 21 20 19 NC 1 18 VCC2 GND 2 17 GND LOP 3 LON 4 -45° +45° ` 16 RFOUT 15 NC GND 5 14 GND NC 6 13 NC 7 8 9 10 11 12 NC GND QN QP GND GND Functional Block Diagram Product Description The RFMD2014 is direct quadrature modulator for use in cellular base stations and other munications systems. RFMD2014 supports cellular, 3G, Wi Max, and LTE air interface standards. This device features operation from 1450MHz to 2700MHz with excellent carrier and sideband suppression and ultra low noise floor. The device is manufactured in an advanced Ga As HBT process. The RFMD2014 operates from a single 5V supply and is packaged in a low cost, 4mm x 4mm, 24-pin leadless package. DS111121 Optimum Technology Matching® Applied Ga As HBT - Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge...