SGB2400 Datasheet Text
SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier
SGB2400
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for high linearity 3V gain block applications that require small size and minimal external ponents. The die is internally matched to 50.
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
- SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Gain and Return Loss (dB)
Gain and Return Loss
- SGB2433Z
Packaged Part
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0 -30.0 -35.0
Gain IRL ORL
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Features...