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SGB2400 - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

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RF Micro Devices

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SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER by RF Micro Devices - Datasheet Preview — Datasheet preview – SGB2400

Datasheet Details

Part number	SGB2400
Manufacturer	RF Micro Devices
File Size	113.83 KB
Description	DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
Datasheet	SGB2400 Datasheet
Additional preview pages of the SGB2400 datasheet.

Product details

Description

RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.

Features

High Reliability SiGe HBT Technology.
Robust Class 1C ESD.
P1dB = 6.9dBm at 1950MHz.
IP3 = 18.0dBm at 1950MHz.
Die Size: 0.75mm x 0.70mm.

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Published: Apr 1, 2016 |