SGB2433Z Datasheet | RF Micro Devices

SGB2433ZSGB2433Z DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS pliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD’s SGB2433Zis a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3Vto5V supply the SGB2433Z does not require a drop resistor as pared to typical Darlington amplifiers. This robust amplifier Features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB2433Z product is designed for high linearity 3V gain block applications that require small size and minimal external ponents. It is on chip matched to 50 and an exter- nal bias inductor choke is required for the application band. Optimum Technology Matching® Applied Vbias NC NC VCC GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS - SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS NC NC NC GND NC NC RFIN NC Active Bias NC NC RFOUT NC Features - High Reliability SiGe HBT Technology - Robust Class 1C ESD - Simple and Small Size - P1dB=6.9dBm at 1950MHz - IP3=18.0dBm at 1950MHz - Low Thermal Resistance = 221 C/W Applications - 3V Battery Operated Applications - LO Buffer Amp - RF Pre-Driver and RF Receive Path Parameter Specification Min. Typ. Small Signal Gain...