SXA389BZ Overview
RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are spe- cially designed for use as driver devices for infrastructure equipment...
SXA389BZ Key Features
- Lower RTH for increased MTTF 108 Hours at TLead=85C
- On-Chip Active Bias Control, Single 5V Supply
- Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz
- High P1dB :+25dBm Typ
- High Gain:+18.5dB at 850MHz
- Efficient: Consumes Only
SXA389BZ Applications
- Lower RTH for increased MTTF 108 Hours at TLead=85C