RTH23007-10 Description
Acmodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x...
RTH23007-10 Key Features
- GaN on SiC Chip on Board
- Surface Mount Hybrid Type
- Asymmetric Doherty Amplifier
- High Efficiency
- No Matching circuit needed