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RTH35003-20D - GaN Doherty Hybrid Amplifier

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.

Features

  • GaN on SiC Chip on Board.
  • Surface Mount Hybrid Type.
  • 2-Stage Doherty Amplifier.
  • High Efficiency.
  • No Matching circuit needed.

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Datasheet Details

Part number RTH35003-20D
Manufacturer RFHIC
File Size 548.63 KB
Description GaN Doherty Hybrid Amplifier
Datasheet download datasheet RTH35003-20D Datasheet

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Full PDF Text Transcription

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GaN Doherty Hybrid Amplifier RTH35003-20D Product Features • GaN on SiC Chip on Board • Surface Mount Hybrid Type • 2-Stage Doherty Amplifier • High Efficiency • No Matching circuit needed Applications • RF Sub-Systems • Base Station • RRH •4G/ LTE system • Small cell Description Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness Input Return Loss Pout @ Average UNIT MHz dB dBm MIN 3520 21 -1.5 - TYP 3540 24 -14 35.1 MAX 3560 +1.5 -9 - Pout @ Saturation dBm 42.6 43.5 - ACLR @ BW 20MHz 2FA LTE (PAPR 7.
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