RTH35003-20D Description
SP-1E Acmodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. Idq mA - 110 - Peaking Amp. Idq -0- -4.9 -2.8 -2.0 -4.9 -2.8 -2.0 Supply Voltage.
RTH35003-20D Key Features
- GaN on SiC Chip on Board
- Surface Mount Hybrid Type
- 2-Stage Doherty Amplifier
- High Efficiency
- No Matching circuit needed