Datasheet Details
| Part number | RTH35003-20D |
|---|---|
| Manufacturer | RFHIC |
| File Size | 548.63 KB |
| Description | GaN Doherty Hybrid Amplifier |
| Download | RTH35003-20D Download (PDF) |
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| Part number | RTH35003-20D |
|---|---|
| Manufacturer | RFHIC |
| File Size | 548.63 KB |
| Description | GaN Doherty Hybrid Amplifier |
| Download | RTH35003-20D Download (PDF) |
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Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness Input Return Loss Pout @ Average UNIT MHz dB dBm MIN 3520 21 -1.5 - TYP 3540 24 -14 35.1 MAX 3560 +1.5 -9 - Pout @ Saturation dBm 42.6 43.5 - ACLR @ BW 20MHz 2FA LTE (PAPR 7.5dB) dBc - -29 -25 -53 - Doherty Efficiency Total Efficiency % 35 46 38 - Drive Amp.
Idq - 40 - Carrier Amp.
GaN Doherty Hybrid Amplifier RTH35003-20D Product.
| Part Number | Description |
|---|---|
| RTH23007-10 | GaN Doherty Hybrid Amplifier |