RTH35003-20D
RTH35003-20D is GaN Doherty Hybrid Amplifier manufactured by RFHIC.
GaN Doherty Hybrid Amplifier RTH35003-20D
Product Features
- GaN on SiC Chip on Board
- Surface Mount Hybrid Type
- 2-Stage Doherty Amplifier
- High Efficiency
- No Matching circuit needed
Applications
- RF Sub-Systems
- Base Station
- RRH
- 4G/ LTE system
- Small cell
Description
Package Type : SP-1E
Acmodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds=30V, Ta=25℃
PARAMETER Frequency Range
Power Gain Gain Flatness Input Return Loss Pout @ Average
UNIT MHz dB dBm
MIN 3520
21 -1.5
- TYP 3540
24 -14 35.1
MAX 3560
+1.5 -9
-...
