FPD6836P70 Description
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS.
FPD6836P70 Key Features
- 22dBm Output Power (P1dB)
- 15dB Gain at 5.8GHz
- 0.8dB Noise Figure at
- 32dB Output IP3 at 5.8GHz
- 45% Power-Added Efficiency
- Usable Gain to 18GHz