RFMD FPD6836P70
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.| Part No. | FPD6836P70 |
|---|---|
| Datasheet | FPD6836P70 Download |
| Manufacturer |  RFMD |
| Description | LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT |
| Buy | Stock & Price |
DESCRIPTION
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOSFEATURES
22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8 GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable Gain to 18GHzAPPLICATIONS
Gain blocks and medium power stages WiMax (2GHz to 11GHz) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18 GHz) Parameter Specification Min. Typ. Max. Unit P1dB at Gain Compression Small-Signal Gain (SSG) 22 14 16 dBm dB PAE 45 % Maximum Stable Gain (|S21/S12|) 15 12 Noise Figure (NF) 0.8 dB OIP3 Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) Transconductance (GM) 90 32 dBm 105 135 mA 215 mA 140 ms Gate-Source Leakage Current (IGSO) 1 10 μA Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V Gate-Source Breakdown Voltage (VBDGS) |12| |14| V Gate-Drain Breakdown Voltage (VBDGD) |14.5| |16| V Thermal Resistivity (θJC) * 275 °C/W *Note: TAMBIENT=22°C, RF specification measured at f=5.8GHz using CW signal (except as noted).
