FPD6836P70 Overview
Package ‐ P70 The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low‐noise, high‐frequency applications. Revision 2.0 FPD6836P70 Low‐Noise High‐Frequency Packaged pHEMT RATINGS1 PARAMETER TEST CONDITIONS device Caution! ESD sensitive Drain‐Source Voltage (VDS) ‐3V<VGS<0V 8V Exceeding any one or a bination of Gate‐Source...
