SBA4089Z Datasheet | RF Micro Devices

SBA4089ZSBA4089Z DCto5GHz, CASCADABLE In Ga P/Ga As HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA4089Z is a high performance In Ga P/Ga As Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with In Ga P process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS d B 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Gain and Return Loss vs Frequency S21 S22 S11 12 34 5 Frequency (GHz) Features -...