DESCRIPTION
RFMD’s A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS dB 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0 Gain and Return Loss vs Frequency S21 S22 S11 12 34 5 Frequency (GHz) 6 FEATURES
● IP3
RFMD
