SBA4089Z - CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

RF Micro Devices (now Qorvo)

General Description

RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier.

A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance.

Key Features

IP3.

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SBA4089Z cascadable ingap/gaas hbt mmic amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	SBA4089Z
Manufacturer	RF Micro Devices (now Qorvo)
File Size	302.92 KB
Description	CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
Datasheet	SBA4089Z Datasheet

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number	Description
SBA5089Z	CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

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SBA4089ZSBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.