SBB2089Z Datasheet | RF Micro Devices

50MHz to 850MHz, CASCADABLE ACTIVE BIAS In Ga P HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBB2089Z is a high performance In Ga P HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB2089Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SBB2089Z product is designed for high linearity 5V gain block applications that require small size and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS d B Gain and Return Loss versus Frequency (w/ App. Ckt.) 20.0 10.0 S21 -10.0 -20.0 S11 -30.0 -40.0 S22 S11 S21 S22 -50.0 50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0 Frequency (MHz) Features - OIP3=42.8d Bm at 240MHz - P1d B=20.8d Bm at 500MHz - Single Fixed 5V Supply - Robust 2000V ESD, Class 2 - Patented Thermal Design and Bias Circuit - Low Thermal Resistance Applications - Receiver IF Amplifier - Cellular, PCS, GSM, UMTS - Wireless Data, Satellite Termi-...