RFMD SBB2089Z
SBB2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB2089Z does not require a dropping resistor as compared to typical Darlington amplifiers.DESCRIPTION
RFMD’s The SBB2089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS dB Gain and Return Loss versus Frequency (w/ App. Ckt.) 30.0 20.0 10.0 S21 0.0 -10.0 -20.0 S11 -30.0 -40.0 S22 S11 S21 S22 -50.0 50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0 Frequency (MHz)FEATURES
● OIP3=42.8dBm at 240MHz● P1dB=20.8dBm at 500MHz
● Single Fixed 5V Supply
● Robust 2000V ESD, Class 2
● Patented Thermal Design and Bias Circuit
● Low Thermal Resistance
APPLICATIONS
● Receiver IF Amplifier● Cellular, PCS, GSM, UMTS
● Wireless Data, Satellite Termi- nals Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 20.0 dB 70MHz 18.5 20.0 21.5 dB 240MHz 18.5 20.0 21.5 dB 400MHz Output Power at 1dB Compression 20.0...