DESCRIPTION
RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. Matching® Applied GaAs HBT GaAs MESFET Isolation vs. Frequency InGaP HBT 0 SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT -2 0 dB -4 0 Si CMOS -6 0 Si BJT -8 0 GaN HEMT 100 500 900 1900 2400 3500 6000 InP HBT RF MEMS LDMOS Frequency MHz FEATURES
DCto400MHz Operation Single Supply Voltage Excellent Isolation, >50dB at 900 MHz 50W In/Out, Broadband Match for Operation from DC4 GHz Unconditionally Stable APPLICATIONS
Buffer Amplifier for Oscillator APPLICATIONS
Broadband Gain Blocks IF Amp Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15 17 19 dB 850 MHz 12 15 17 dB 1950 MHz Output Power at 1dB Compression -13.0 -9.5 dBm 1950 MHz Output Third Order Intercept Point -1.5 1.0 dBm 1950 MHz Determined by Return Loss (<-10dB) MHz Input Return Loss 9.5 11.2 dB 1950 M...
RFMD
