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SGA-1263 - DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

General Description

RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz.

Key Features

  • DCto400MHz Operation.
  • Single Supply Voltage.
  • Excellent Isolation, >50dB at 900 MHz.
  • 50W In/Out, Broadband Match for Operation from DC4 GHz.
  • Unconditionally Stable.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SGA-1263Z DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA-2286 CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-2286Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-3486 CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-3486Z CASCADABLE SiGe HBT MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V.