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SGA-1263 - Cascadable SiGe HBT MMIC Amplifier

Download the SGA-1263 datasheet PDF. This datasheet also covers the SGA-1263Z variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz.

Key Features

  • • DC-4000 MHz Operation • Single Supply Voltage • Excellent Isolation, >50 dB at 900 MHz • 50 Ohms In/Out, Broadband Match for Operation from DC-4 GHz • Unconditionall.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-1263Z_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-1263
Manufacturer Sirenza Microdevices
File Size 327.79 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-1263 Datasheet

📁 Similar Datasheet

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Other Datasheets by Sirenza Microdevices

Part Number Description
SGA-1163 DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block
SGA-0163 Silicon Germanium Cascadeable Gain Block
SGA-0163Z Silicon Germanium Cascadeable Gain Block
SGA-0363 Silicon Germanium Cascadeable Gain Block
SGA-0363Z Silicon Germanium Cascadeable Gain Block

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. Preliminary SGA-1263 DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block 100 500 900 1900 2400 3500 6000 This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs.