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SGA4563Z - CASCADABLE SiGe HBT MMIC AMPLIFIER

General Description

The SGA4563Z is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Key Features

  • High Gain: 20.2dB at 1950 MHz.
  • Cascadable 50.
  • Operates from Single Supply.
  • Low Thermal Resistance Package.

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SGA4563ZSGA4563Z DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs.