RFMD SGA4563Z
The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA4563Z |
|---|---|
| Datasheet | SGA4563Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency 32 GAIN VD= 3.5 V, ID= 45 mA (Typ.) 24 ORL 16 IRL 8 0 012345 Frequency (GHz) 0 -10 -20 -30 -40 6FEATURES
● High Gain: 20.2dB at 1950 MHz● Cascadable 50
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 25.6 dB 850MHz 20.2 dB 1950MHz 18.6 dB 2400MHz Output Power at 1dB Com...
