• Part: SGA4563Z
  • Description: CASCADABLE SiGe HBT MMIC AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 603.49 KB
Download SGA4563Z Datasheet PDF
RF Micro Devices
SGA4563Z
SGA4563Z is CASCADABLE SiGe HBT MMIC AMPLIFIER manufactured by RF Micro Devices.
SGA4563ZSGA4563Z DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si...