RFMD SGC4563Z
SGC4563Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as compared to typical Darlington amplifiers.| Part No. | SGC4563Z |
|---|---|
| Datasheet | SGC4563Z Download |
| Manufacturer |  RFMD |
| Description | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s The SGC4563Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied Gain and RL versus Frequency 30 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dB 20 S21 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S11 -20 -30 -40 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) S22 Gain IRL ORL 3.0 3.5FEATURES
● Single Fixed 3V Supply● No Dropping Resistor Required
● Patented Self-Bias Circuitry
● P1dB=15.6dBm at 1950MHz
● OIP3=28.5dBm at 1950MHz
● Robust 1000V ESD, Class 1C HBM
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS, WCDMA
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 26.5 dB Freq=500MHz 22.5 25.5 28.5 dB Freq=*850MHz 18.5 20.5 22.5 dB Freq=1950MHz Output Power at 1dB Compression 16.8 dBm Freq=500MHz 1...
