Datasheet4U Logo Datasheet4U.com
RF Micro Devices (now Qorvo) logo

SGC4563Z

Manufacturer: RF Micro Devices (now Qorvo)

SGC4563Z datasheet by RF Micro Devices (now Qorvo).

SGC4563Z datasheet preview

SGC4563Z Datasheet Details

Part number SGC4563Z
Datasheet SGC4563Z-RFMD.pdf
File Size 420.35 KB
Manufacturer RF Micro Devices (now Qorvo)
Description 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563Z page 2 SGC4563Z page 3

SGC4563Z Overview

RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as pared to typical Darlington amplifiers.

SGC4563Z Key Features

  • Single Fixed 3V Supply
  • No Dropping Resistor
  • Patented Self-Bias Circuitry
  • P1dB=15.6dBm at 1950MHz
  • OIP3=28.5dBm at 1950MHz
  • Robust 1000V ESD, Class 1C
RF Micro Devices (now Qorvo) logo - Manufacturer

More Datasheets from RF Micro Devices (now Qorvo)

View all RF Micro Devices (now Qorvo) datasheets

Part Number Description
SGC4263Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4486Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC2363Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC2463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGC4563Z Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts