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SGC4563Z

SGC4563Z is 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK manufactured by RF Micro Devices.
SGC4563Z datasheet preview

SGC4563Z Datasheet

Part number SGC4563Z
Download SGC4563Z Datasheet (PDF)
File Size 420.35 KB
Manufacturer RF Micro Devices
Description 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563Z page 2 SGC4563Z page 3

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SGC4563Z Distributor

SGC4563Z Description

RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as pared to typical Darlington amplifiers.

SGC4563Z Key Features

  • Single Fixed 3V Supply
  • No Dropping Resistor
  • Patented Self-Bias Circuitry
  • P1dB=15.6dBm at 1950MHz
  • OIP3=28.5dBm at 1950MHz
  • Robust 1000V ESD, Class 1C

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