SHF-0189 Datasheet | RF Micro Devices

Description RFMD’s SHF-0189 is a high performance AIGa As/Ga As Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1d B pression for the SHF-0189 is +27d Bm when biased for Class AB operation at 8V, 100m A. The +40d Bm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless munication infrastructure Optimum Technology and subscriber equipment including 3G, cellular, PCS, Matching® Applied fixed wireless, and pager systems. Ga As HBT Gain, Gmax (d B) Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Typical Gain Performance (8V,100m A) 35 Gmax Si BJT Gain Ga N HEMT In P HBT -5 RF MEMS LDMOS 012345678 Frequency (GHz) Features - Available in RFMD Green, Ro HS...