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SHF-0189 - 0.5WATT GaAs HFET

General Description

RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Key Features

  • Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number).
  • High Linearity Performance at 1.96 GHz +27dBm P1dB +40dBm Output IP3 +16.5dB Gain.
  • High Drain Efficiency.

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📁 Similar Datasheet

Part Number Description Manufacturer
SHF-0189 GaAs HFET Sirenza Microdevices
SHF-0189Z GaAs HFET Sirenza Microdevices
SHF-0186 DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET ETC
SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET ETC
SHF-0289 1.0 Watt GaAs HFET ETC

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SHF-0189Z 0.5WATT GaAs HFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET SHF-0189(Z) 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA. The +40dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.