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SHF-0189 Datasheet PDF

RFMD SHF-0189

SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. The +40dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.
Part No. SHF-0189
Datasheet SHF-0189 Download
Manufacturer
RFMD
Description 0.5WATT GaAs HFET
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SHF-0189 datasheet page 1 preview

DESCRIPTION

RFMD’s Output power at 1dB compression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA. It is well suited for use in both analog and digital wireless communication infrastructure Optimum Technology and subscriber equipment including 3G, cellular, PCS, Matching® Applied fixed wireless, and pager systems. GaAs HBT Gain, Gmax (dB) GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Typical Gain Performance (8V,100mA) 35 30 25 Gmax 20 15 10 Si BJT 5 Gain GaN HEMT 0 InP HBT -5 RF MEMS LDMOS 012345678 Frequency (GHz)

FEATURES

„ Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number) „ High Linearity Performance at 1.96 GHz +27dBm P1dB +40dBm Output IP3 +16.5dB Gain „ High Drain Efficiency

APPLICATIONS

„ Analog and Digital Wireless Systems „ 3G, Cellular, PCS „ Fixed Wireless, Pager Systems Parameter Specification Min. Typ. Max. Unit Condition Maximum Available Gain 23.3 dB 0.90GHz, ZS=ZS*, ZL=ZL* Insertion Gain [1] 16.6...
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