SHF-0189Z Description
RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB pression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA.
SHF-0189Z Key Features
- Available in RFMD Green, RoHS pliant, and Pb-Free (Z Part Number)
- High Drain Efficiency