MG6401WZ Description
MG6401WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. 2- - FULL SQUARE Unit μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Emitter Bonding Pad Backside.
MG6401WZ Key Features
- Emitter Saturation Voltage