MG6401WZ
650V 30A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 30A 1.5V 1026pcs l Features 1) Trench Light Punch Through Type
2) Low Collector
- Emitter Saturation Voltage
3) High Speed Switching & Low Switching Loss
4) Short Circuit Withstand Time 2μs l Outline
Wafer l Inner Circuit
(1)
(2) (3) l Application Solar Inverter UPS Welding IH PFC l Absolute Maximum Ratings Parameter
Collector
- Emitter Voltage, Tj = 25°C Gate
- Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature
- 1 Depending on thermal properties of assembly
- 2 Pulse width limited by Tjmax.
Symbol VCES VGES IC- 1 ICP- 2 Tj
(1) Gate (2) Collector (3) Emitter
Value 650 ±30
- 1)
120 -40 to +175
Unit V V A A °C
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1/3
- Rev.A
Datasheet l Design Assurance
Parameter
Symbol
Conditions
Short Circuit Withstand Time
VCC ≦ 360V, tsc- 3 VGE = 15V,
Tj =...
