MG6401WZ - Insulated Gate Bipolar Transistor

Datasheet Summary

Features

1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) l.

ROHM

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Datasheet Details

Part number	MG6401WZ
Manufacturer	ROHM
File Size	460.68 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MG6401WZ Datasheet
Additional preview pages of the MG6401WZ datasheet.

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MG6401WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 30A 1.5V 1026pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Collector (3) Emitter Value 650 ±30 *1) 120 -40 to +175 Unit V V A A °C www.

Published: May 9, 2020 |