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MG6403WZ - Insulated Gate Bipolar Transistor

Datasheet Summary

Features

  • 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) l.

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Datasheet Details

Part number MG6403WZ
Manufacturer ROHM
File Size 456.00 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MG6403WZ Datasheet
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Full PDF Text Transcription

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MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 80A 1.5V 444pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Collector - Emitter Voltage VCES Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature VGES IC*1 ICP*2 Tj *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
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