MG6403WZ Overview
MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Value 650 ±30 1) 320 -40 to +175 Unit V V A A °C .rohm. 2- - FULL SQUARE Unit μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min.
MG6403WZ Key Features
- Emitter Saturation Voltage