Datasheet4U Logo Datasheet4U.com

R6010MND3 - MOSFET

Key Features

  • 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 l.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R6010MND3   Nch 600V 10A Power MOSFET    Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline   RDS(on)(Max.) 0.380Ω ID ±10A TO-252 PD 143W          lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple.