The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
R6011ENJ
Nch 600V 11A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.39Ω
SC-83
ID
±11A
LPT(S)
PD
lFeatures
124W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6011ENJ Unit
Drain - Source voltage Continuous drain current Pulsed drain current
TC = 25°C TC = 100°C
VDSS ID*1 ID*1 IDP*2
600
V
±11
A
±5.