R6011ENJ Overview
R6011ENJ Nch 600V 11A Power MOSFET Datasheet lOutline VDSS 600V TO-263S RDS(on)(Max.) 0.39Ω SC-83 ID ±11A LPT(S) PD lFeatures 124W lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple.
