R6011KNX - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	R6011KNX
Manufacturer	INCHANGE
File Size	248.01 KB
Description	N-Channel MOSFET
Datasheet	R6011KNX Datasheet
Additional preview pages of the R6011KNX datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 22 A PD Total Dissipation @TC=25℃ 53 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res

Features

Drain Current.
ID= 11A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 390mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

R6011KNJ - Power MOSFET (ROHM)
R601 - General Purpose Rectifier (Powerex Power Semiconductors)
R6010ANX - Drive Nch MOSFET (Rohm)
R6010MND3 - MOSFET (ROHM)
R6012ANJ - Drive Nch MOSFET (Rohm)
R6012ANX - Drive Nch MOSFET (Rohm)
R6012FNX - Drive Nch MOSFET (Rohm)
R6012JNX - Power MOSFET (ROHM)

Other Datasheets by INCHANGE

R6011ENJ - N-Channel MOSFET
R6011ENX - N-Channel MOSFET
R6010MNX - N-Channel MOSFET
R6015ENJ - N-Channel MOSFET
R6015ENX - N-Channel MOSFET
R6015ENZ - N-Channel MOSFET

Published: Mar 1, 2021 |