R6015ENX - N-Channel MOSFET

Inchange Semiconductor

Key Features

Low on-resistance.
Fast switching speed.
Parallel use is easy.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

R6015ENX n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	R6015ENX
Manufacturer	Inchange Semiconductor
File Size	196.87 KB
Description	N-Channel MOSFET
Datasheet	R6015ENX Datasheet

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Isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor R6015ENX ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage;static Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 15 8.1 30 PD Total Dissipation 60 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ SYMBO L PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a ) Channel-to-ambient thermal resistance MA X UNIT 2.