R6015ENJ Datasheet (PDF) Download
Inchange Semiconductor
R6015ENJ

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 184 W TJ Max.

Key Features

  • Drain Current –ID= 15A@ TC=25℃
  • Drain Source Voltage- : VDSS=600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation