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Data Sheet
10V Drive Nch MOSFET
R6012FNX
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.
14.0
2.5
Features 1) Fast reverse recovery time (trr)
15.0
12.0
8.0
1.3
1.2
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
Application Switching
Inner circuit
Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500
∗1
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R6012FNX Datasheet
