R6012FNX Description
Data Sheet 10V Drive Nch MOSFET R6012FNX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 4) Gate-source voltage VGSS garanteed to be ±30V.
R6012FNX Key Features
- Application Switching
- Inner circuit
- Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500