Click to expand full text
R6515ENJ
Nch 650V 15A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.315Ω ±15A 184W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6515ENJ
Basic ordering unit (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650 V ±15 A ±45 A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS 2.