R6515ENJ
Nch 650V 15A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.315Ω ±15A 184W l Features
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Outline
LPT(S)
l Inner circuit
Datasheet
l Application Switching l Packaging specifications
Packing
Embossed Tape
Packing code
Marking
Basic ordering unit (pcs)
1000 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID- 1 IDP- 2
650 V ±15 A ±45 A
Gate
- Source voltage static AC(f＞1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS 2.4 A
Avalanche energy, single pulse
EAS- 3
310 m J
Power dissipation (Tc = 25°C)
PD 184 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature...
