R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS
800V l Outline
TO-263S
RDS(on)(Max.)
1.03Ω
SC-83
±8A
LPT(S)
195W
l Features
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free plating ; Ro HS pliant l Inner circuit l Packaging specifications Packing
Embossed Tape
Reel size (mm)
330 l Application Switching Power Supply
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R8008ANJ Unit
Drain
- Source voltage
VDSS
800 V
Continuous drain current (Tc = 25°C)
ID- 1 ±8 A
Pulsed drain current
IDP- 2 ±32 A
Gate
- Source...