RB161QS-40 - Schottky Barrier Diode

ROHM

Key Features

1) Small Silicon package (SMD1006) 2) Halogen free 3) Low VF.
Construction Silicon epitaxial planar type SMD1006.
Structure Cathode ROHM : SMD1006.
Taping Dimensions (Unit : mm) Anode.
Absolute Maximum Ratings (Tc=25℃) Parameter Symbol Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Average forward rectified current IO Repetitive Peak Forward Current IFRM Non-repetitive Forward Current Surge Peak IFSM Operating Junction Temperature Tj Storage Temperature.

RB161QS-40 schottky barrier diode by ROHM - Datasheet Preview

Datasheet Details

Part number	RB161QS-40
Manufacturer	ROHM
File Size	710.82 KB
Description	Schottky Barrier Diode
Datasheet	RB161QS-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB161QS-40 ●Applications General rectification ●Dimensions (Unit : mm) Datasheet ●Land Size Figure (Unit : mm) 0.6 0.35 0.65 ●Features 1) Small Silicon package (SMD1006) 2) Halogen free 3) Low VF ●Construction Silicon epitaxial planar type SMD1006 ●Structure Cathode ROHM : SMD1006 ●Taping Dimensions (Unit : mm) Anode ●Absolute Maximum Ratings (Tc=25℃) Parameter Symbol Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Average forward rectified current IO Repetitive Peak Forward Current IFRM Non-repetitive Forward Current Surge Peak IFSM Operating Junction Temperature Tj Storage Temperature Tstg Conditions Duty≦0.5 Direct Reverse Voltage Glass epoxy board mounted, 60Hz half sin wave, resistive load, Tc=90ºC Max. t≦1ms Duty≦0.