1) Cathode common type
r 2) High reliability o 3) Super low IR d f lConstruction de Silicon epitaxial planar type
15.0±
0. 4 0. 2
1
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
5.0±0.2
8.0±0.2
14.0±0.5
2.6±0.5
0.75±00..015 ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3) Anode Cathode Anode
men igns lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
s Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
150
V
m e Reverse Voltage
VR
Direct Reverse Voltage
150
V.
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Schottky Barrier Diode
RB228T150
Data Sheet
lApplication Switching power supply
lDimensions (Unit : mm)
4.5±00..31
lStructure
10.0±
0.3 0.1
f3.2±0.2
2.8±00..21
12.0±0.2
lFeatures 1) Cathode common type
r 2) High reliability o 3) Super low IR d f lConstruction de Silicon epitaxial planar type
15.0±
0. 4 0. 2
1
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
5.0±0.2
8.0±0.2
14.0±0.5
2.6±0.5
0.75±00..015 ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3) Anode Cathode Anode
men igns lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
s Repetitive Peak Reverse Voltage
VRM
Duty≦0.
RB228T150 Datasheet
