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RB228T150NZ - Schottky Barrier Diode

Key Features

  • 1) Cathode common type 2) High reliability 3) Super low IR (1) (2) (3) Anode Cathode Anode.
  • Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture Date.
  • Package Dimensions (Unit : mm) 7 540 34.5.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 150 V Reverse Voltage VR Direct Reverse Voltage 150 V Average Forward Rectified Current Io Glass epoxy board mounted, 60Hz.

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Datasheet Details

Part number RB228T150NZ
Manufacturer ROHM
File Size 1.31 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB228T150NZ Datasheet

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Other Datasheets by ROHM

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RB228T150 Schottky Barrier Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB228T150NZ Application Switching power supply Dimensions (Unit : mm) Datasheet Structure Features 1) Cathode common type 2) High reliability 3) Super low IR (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture Date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 150 V Reverse Voltage VR Direct Reverse Voltage 150 V Average Forward Rectified Current Io Glass epoxy board mounted, 60Hz half sin wave, resistive load, IO/2 per diode,Tc=100ºC Max.