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RB298T100NZ - Schottky Barrier Diode

Key Features

  • 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 4.5±00..31 2.8±00..21 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar type 2.45±0.5 2.45±0.5 (1) (2) (3) 0.75±00..015 ROHM : TO220FN 1 : Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetiti.

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Datasheet Details

Part number RB298T100NZ
Manufacturer ROHM
File Size 453.07 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB298T100NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB298T100NZ lApplication Switching power supply lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 4.5±00..31 2.8±00..21 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar type 2.45±0.5 2.45±0.5 (1) (2) (3) 0.75±00..015 ROHM : TO220FN 1 : Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.