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RFN5TF8S - Super Fast Recovery Diode

Key Features

  • 1)Low switching Loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zDimensions(Unit : mm) RFN5 TF8S ձղ ᖺ᭶ ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical Characteristics(Tj=25°C.

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Datasheet Details

Part number RFN5TF8S
Manufacturer ROHM
File Size 462.18 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN5TF8S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RFN5TF8S zSerise Standard Fast Recovery zApplications General rectification zFeatures 1)Low switching Loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zDimensions(Unit : mm) RFN5 TF8S ձղ ᖺ᭶ ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions Duty0.