RFN5TF8S
Super Fast Recovery Diode
RFN5TF8S z Serise Standard Fast Recovery z Applications General rectification z Features 1)Low switching Loss 2)High current overload capacity z Construction Silicon epitaxial planer type z Dimensions(Unit : mm)
㻞㻚㻢㼼㻜㻚㻞
㻤㻢㻌 㻢㻣㻌
RFN5 䐟㻌 䐠㻌
TF8S
ձղ 㻝㻚㻡㼼㻜㻚㻞
㻜㻚㻝㼼㻜㻚㻜㻞 䚷䚷䚷㻌㻜㻚㻝
㻞㻚㻜㼼㻜㻚㻞
㻾㻻㻴㻹㻌㻦㻌㻼㻹㻰㻿㻌 㻶㻱㻰㻱㻯㻌㻦㻌㻿㻻㻰㻙㻝㻜㻢㻌
䐟㻌 䐠㻌 〇㐀ᖺ᭶㻌
ROHM : 䠰O220NFM ձ Manufacture Year ղ Manufacture Week
㻠㻚㻡㼼㻜㻚㻞 㻝㻚㻞㼼㻜㻚㻟
㻡㻚㻜㼼㻜㻚㻟
Data Sheet z Structure z Absolute Maximum Ratings(Tc=25°C)
Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg z Electrical Characteristics(Tj=25°C) Parameter
Forward voltage Reverse current Reverse recovery time Thermal resistance
Symbol VF IR trr
Rth(j-c)
Conditions Duty䍺0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=106°C 60Hz half sin wave , Non-repetitive at Tj=25°C
Conditions IF=5A
VR=800V IF=0.5A,IR=1A,Irr=...
