RGPR30BM40 Overview
1/9 2017.05 - Rev.A RGPR30BM40 lThermal Resistance Parameter IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Min. Unit - - 1.20 °C/W lElectrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Emitter - Collector Breakdown Voltage Symbol Conditions BVCES IC = 2mA, VGE = 0V Tj = 25°C Tj = -40 to 175°C 2 Min. 370 365 BVEC IC = -10mA, VGE = 0V 25 Values Typ.
RGPR30BM40 Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant