RGPR50NL45HR Description
1/9 2019.07 - Rev.A RGPR50NL45HR lThermal resistance Parameter IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Min. - - 0.80 Unit C/W lElectrical characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Collector - Emitter Breakdown Voltage IC = 2mA, VGE = 0V, BVCES Tj = 25°C Tj = -40 to 175°C 2 Gate - Emitter Breakdown Voltage BVEC IC = -10mA, VGE = 0V Min.
RGPR50NL45HR Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant