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RGTV00TS65D - Field Stop Trench IGBT

Datasheet Summary

Features

  • 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant.
  • Outline TO-247N.
  • Inner Circuit (2) (1)(2)(3).
  • 1 (1) (3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD.

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Datasheet preview – RGTV00TS65D

Datasheet Details

Part number RGTV00TS65D
Manufacturer ROHM
File Size 1.34 MB
Description Field Stop Trench IGBT
Datasheet download datasheet RGTV00TS65D Datasheet
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RGTV00TS65D 650V 50A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A 1.
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