RGWSX2TS65D Description
1/11 2021.08 - Rev.A RGWSX2TS65D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. - - 0.52 C/W - - 2.88 C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. 2/11 2021.08 - Rev.A RGWSX2TS65D Datasheet lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min.
RGWSX2TS65D Key Features
- Emitter Saturation Voltage
- free Lead Plating ; RoHS pliant
- 1 Built in FRD
- Tape Width (mm)