1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low
capacitance (CT). VMN2
zStructure
zConstruction Silicon epitaxial planar
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage Forward current Power dissipation
VR
IF Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits 30 100 100 150
-55 to +150
Unit V mA
mW °C °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Forward voltag.
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PIN diode
RN262CS
zApplications High frequency switching
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
0.55
0.45 0.45 0.5
zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low
capacitance (CT).
VMN2
zStructure
zConstruction Silicon epitaxial planar
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage Forward current Power dissipation
VR
IF Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits 30 100 100 150
-55 to +150
Unit V mA
mW °C °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage Reverse current Capacitance between terminals
VF - - 1 IR - - 0.1 Ct - - 0.4
High frequency resistance
Rf - - 2.8 - - 1.
RN262CS Datasheet
