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RSD080P05 - MOSFET

Key Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.  Application Switching  Dimensions (Unit : mm) CPT3 (SC-63)  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD080P05 Taping TL 2500 ○  Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 45 20 8.0 16 8.