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Data Sheet
4V Drive Pch MOSFET
RSD080P05
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
Application Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSD080P05
Taping TL
2500 ○
Inner circuit
∗1 ∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2
Tch
Tstg
45 20 8.0 16 8.