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RSD080P05FRA - MOSFET

Key Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4V Drive Pch MOSFET RRSSDD008800PP0055FRA Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.  Application Switching Data Sheet AEC-Q101 Qualified  Dimensions (Unit : mm) CPT3 (SC-63)  Packaging specifications Package Type Code Basic ordering unit (pieces) RRSSDD008800PP050F5RA Taping TL 2500 ○  Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 45 20 8.0 16 8.