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SCS220AE
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 20A 31nC
TO-247
(1) (2)
(3)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) N/C (2) Cathode (3) Anode
(1) (2) (3)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 20* 71* Surge no repetitive forward current IFSM
1 2 3
Tube 30 C SCS220AE
Reel size (mm) Tape width (mm)
Unit V V A A A A A W °C °C
260* 56*
4
Repetitive peak forward current Total power disspation Junction temperature
SCS220AE Datasheet
