ROHM Semiconductor SCS220AJ
SiC Schottky Barrier Diode
| Part No. | SCS220AJ |
|---|---|
| Datasheet | SCS220AJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible●
APPLICATIONS
●PFC Boost Topology●Secondary Side Rectification
●Data Center
●PV Power Conditioners
●Outline LPT(L) <TO-263AB> Datasheet (1) (2) (3) (4)
●Inner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4)
●Packaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1 000 Packing code TLL Marking SCS220AJ
●Absolute maximum ratings (Tj = 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Continuous forward current (Tc= 116°C) IF Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak forward current IFSM IFRM i2t value PW=10ms, Tj=25°C PW=10ms, Tj=150°C ∫i2dt Total power dissipation PD Junction temperature Tj Range of storage temperature Tstg *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C Value 650 650 20 68 53 260 71 *1 23 14 100*2 175 55 to 175 Unit V V A A A A A A2s A2s W °C °C © 2018 ROHM Co., Ltd.
