ROHM Semiconductor SCS220AM
SiC Schottky Barrier Diode
FEATURES
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible●Outline TO-220FM
●Inner circuit Datasheet (1) (2) (1) Cathode (2) Anode
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APPLICATIONS
●PFC Boost Topology●Secondary Side Rectification
●Data Center
●PV Power Conditioners (1) (2)
●Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking Tube 50 C SCS220AM
●Absolute maximum ratings (Tj = 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Continuous forward current (Tc= 21°C) IF Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak forward current IFSM IFRM i2t value PW=10ms, Tj=25°C PW=10ms, Tj=150°C ∫i2dt Total power disspation PD Junction temperature Tj Range of storage temperature Tstg *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C Value 650 650 20 68 53 260 41 *1 23 14 40 *2 175 55 to 175 Unit V V A A A A A A2s A2s W °C °C © 2018 ROHM Co., Ltd.