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SCS302AP Datasheet SiC Schottky Barrier Diode

Manufacturer: ROHM

Overview

SCS302AP SiC Schottky Barrier Diode VR 650V IF 2A QC 6nC .

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability.
  • Construction Silicon carbide epitaxial planar type.
  • Outline TO-220ACP (1) Datasheet.
  • Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3).
  • Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking Tube 50 C9 SCS302AP.
  • Absolute maximum ratings (Tj = 25°C) Parameter Sym.