SCS320AHG
SCS320AHG is SiC Schottky Barrier Diode manufactured by ROHM.
Features
1) Shorter recovery time
650V 20A 47n C
- Outline TO-220ACP
(1)
- Inner Circuit
(2) (3)
(1)
2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability
(1) Cathode (2) Cathode (3) Anode
(2) (3)
- Construction Silicon carbide epitaxial planar type
- Packaging Specifications Packaging
Tube
Reel size (mm)
- Tape width (mm) Type
Basic ordering unit (pcs)
Packing code
C9
Marking
SCS320AH
- Absolute Maximum Ratings (Tj = 25°C ) Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current (Tc=125°C)
Surge nonrepetitive forward current
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C
Repetitive peak forward current i2t value
1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C
Total power disspation
Junction temperature
Range of storage temperature
- 1 Tc=100°C, Tj=150°C, Duty cycle=10%
- 2 Tc=25°C
Symbol VRM VR IF
IFSM
IFRM
∫i2dt
PD Tj...