Datasheet Summary
N-channel SiC power MOSFET
- Outline
VDSS RDS(on) (Typ.) ID PD
- Features
1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
400V 120m 20A 132W
TO220AB
- Inner circuit
(2)
- 1 (1)
(1) Gate (2) Drain (3) Source
- 1 Body Diode
(3)
6) Pb-free lead plating ; RoHS pliant
- Packaging specifications Packing Tube 50 SCTMU001F
- Application
- Audio Type
Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking
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