25N10 - N-Channel MOSFET

General Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤36mΩ).
Low Gate Charge(Typical:61nC).
Low Reverse Transfer Capacitances(Typical:84pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

📥 Download Datasheet

25N10 n-channel mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	25N10
Manufacturer	ROUM
File Size	1.22 MB
Description	N-Channel MOSFET
Datasheet	25N10 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
25N10	N-Channel MOSFET	Unisonic Technologies
25N10	N-Channel MOSFET	INCHANGE
25N102K	Metal Oxide Varistor	HUAAN
25N10G-TN3-R	N-Channel 100V MOSFET	VBsemi
25N112K	Metal Oxide Varistor	HUAAN

Other Datasheets by ROUM

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● LED Boost ● UPS power supply ● Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.