ROUM 25N10
N-Channel MOSFET
| Part No. | 25N10 |
|---|---|
| Datasheet | 25N10 Download |
| Manufacturer | ROUM |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2FEATURES
● Fast Switching● Low ON Resistance(Rdson≤36mΩ)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:84pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● Power switching applications● LED Boost
● UPS power supply
● Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N10/I25N10/E25N10 /B25N10/D25N10 Maximum Drian-Source DC Voltage VDS 100 Maximum Gate-Drain Voltage VGS ±20 Drain Current(continuous) ID（T=25℃） （T=100℃） 30 21 Drain Current(Pulsed)(Note
