B8N25 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 250V RDS(on) （TYP)= 0.4Ω ID = 8A.
B8N25 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω)
- Low Gate Charge(Typical Data:12nC)
- Low Reverse Transfer Capacitances(Typical:7pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
B8N25 Applications
- Used in various power switching circuit for system miniaturization and higher efficiency