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DH100P30 Datasheet PDF

ROUM DH100P30

30A 100V P-channel Enhancement Mode Power MOSFET

Part No. DH100P30
Datasheet DH100P30 Download
Manufacturer ROUM
Description 30A 100V P-channel Enhancement Mode Power MOSFET
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DH100P30 datasheet page 1 preview

DESCRIPTION

These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge. Which accords with the RoHS standard. 2

FEATURES

● Fast Switching
● Low ON Resistance
● Low Gate Charge
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3

APPLICATIONS

● Suitable for Motor Drivers.
● Switching Regulators
● Converters and Relay Drivers
● Alertor VDSS = -100V RDS(on) (TYP)=35mΩ ID = -30A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4

ELECTRICAL CHARACTERISTICS

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value DH100P30/DH100P30I/DH100 DH100P P30E/DH100P30B/DH100P30D 30F Drian-Source Voltage VDS -100 Gate-Drain Voltage Drain Current(continuous) VGS ID(T=25℃) (T=100℃) ±20 -30 -21 Drain Current(
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