ROUM DH100P30B
30A 100V P-channel Enhancement Mode Power MOSFET
DESCRIPTION
These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge. Which accords with the RoHS standard. 2FEATURES
● Fast Switching● Low ON Resistance
● Low Gate Charge
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● Suitable for Motor Drivers.● Switching Regulators
● Converters and Relay Drivers
● Alertor VDSS = -100V RDS(on) (TYP)=35mΩ ID = -30A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value DH100P30/DH100P30I/DH100 DH100P P30E/DH100P30B/DH100P30D 30F Drian-Source Voltage VDS -100 Gate-Drain Voltage Drain Current(continuous) VGS ID(T=25℃) (T=100℃) ±20 -30 -21 Drain Current(