DH100P30B Description
These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge. Which accords with the RoHS standard.
DH100P30B Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitances
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
DH100P30B Applications
- Suitable for Motor Drivers