Datasheet4U Logo Datasheet4U.com

I630 - 9A 200V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤0.4Ω).
  • Low Gate Charge(Typical Data:22nC).
  • Low Reverse Transfer Capacitances(Typical:22pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

📥 Download Datasheet

Datasheet Details

Part number I630
Manufacturer ROUM
File Size 1.32 MB
Description 9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet I630 Datasheet

Full PDF Text Transcription for I630 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for I630. For precise diagrams, and layout, please refer to the original PDF.

630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar tech...

View more extracted text
hannel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.4Ω) ● Low Gate Charge(Typical Data:22nC) ● Low Reverse Transfer Capacitances(Typical:22pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● High efficiency switch mode power supplies. ● Electronic lamp ballasts based on half bridge. ● UPS ● Inverter TO-220C TO-220F TO-262 TO-263 TO-252B TO-25

More Datasheets from ROUM

Part Number Description